Isolation layer for CMOS image sensor and fabricat

专利名称：Isolation layer for CMOS image sensor and

fabrication method thereof

发明人：Kyung-Lak Lee申请号：US10882485申请日：20040630公开号：US07135362B2公开日：20061114

专利附图：

摘要：The present invention relates to an isolation layer for CMOS image sensor and afabrication method thereof, which are capable of improving a low light level characteristicof the CMOS image sensor. The isolation layer includes: a field insulating layer formed on

a predetermined portion of a substrate in the logic area to thereby define an active areaand a field area; a field stop ion implantation area formed on a predetermined portion ofthe substrate in the pixel area, the field stop ion implantation area having a

predetermined depth from a surface of the substrate to define an active area and a fieldarea; and an oxide layer deposited on a substrate surface corresponding to the field stopion implantation area.

申请人：Kyung-Lak Lee

地址：Ichon-shi KR

国籍：KR

代理机构：Blakely, Sokoloff Taylor & Zafman

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