Resistors with controlled resistivity

专利名称：Resistors with controlled resistivity发明人：Daniel C. Edelstein,Chih-Chao Yang申请号：US15814057申请日：20171115公开号：US10325978B2公开日：20190618

专利附图：

摘要：The present application provides planar and stacked resistor structures that areembedded within an interconnect dielectric material in which the resistivity of an electricalconducting resistive material or electrical conducting resistive materials of the resistorstructure can be tuned to a desired resistivity during the manufacturing of the resistor

structure. Notably, a doped metallic insulator layer is formed atop a substrate. Acontrolled surface treatment process is then performed to an upper portion of thedoped metallic insulator layer to convert the upper portion of the doped metallicinsulator layer into an electrical conducting resistive material layer. The remaining dopedmetallic insulator layer and the electrical conducting resistive material layer are thenpatterned to provide the resistor structure.

申请人：International Business Machines Corporation

地址：Armonk NY US

国籍：US

代理机构：Scully, Scott, Murphy & Presser, P.C.

代理人：Steven J. Meyers

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