4N25V(G)/ 4N35V(G) SeriesOptocoupler with Phototransistor OutputOrder Nos. and Classification table is on sheet 2.DescriptionThe 4N25V(G)/ 4N35V(G) series consists of a photo-transistor optically coupled to a gallium arsenideinfrared-emitting diode in a 6-lead plastic dual inlinepackage.The elements are mounted on one leadframe using acoplanar technique, providing a fixed distance betweeninput and output for highest safety requirements.95 1053195 10532ApplicationsCircuits for safe protective separation against electricalshock according to safety class II (reinforced isolation):DFor application class I – IV at mains voltage < 300 VDFor application class I – III at mains voltage < 600 Vaccording to VDE 0884, table 2, suitable for:Switch-mode power supplies, computer peripheralinterface, microprocessor system interface, linereceiver.These couplers perform safety functions according to the following equipment standards:DVDE 0884Optocoupler providing protective separationDVDE 0804Telecommunication apparatus and data processingDVDE 0805/IEC 950/EN 60950Office machines (applied for reinforced isolation formains voltage ≤ 400 VRMS)DVDE 0860/IEC 65Safety for mains-operated electronic and relatedhousehold apparatusTELEFUNKEN SemiconductorsRev. A1, 03-Jun-961 (12)4N25V(G)/ 4N35V(G) SeriesFeaturesAccording to VDE 0884DRated impulse voltage (transient overvoltage) VIOTM = 6 kV peakDIsolation test voltage (partial discharge test voltage)Vpd = 1.6 kVDRated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)DRated recurring peak voltage (repetitive)VIORM = 600 VRMSDCreeping-current resistance according toVDE 0303/IEC 112Comparative Tracking Index: CTI = 275DThickness through insulation ≥ 0.75 mmDFurther approvals:BS 415, BS 7002, SETI: IEC 950,UL 1577: File No: E 76222DIsolation materials according to UL94-VODPollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 6)DClimatic classification 55/100/21 (IEC 68 part 1)DSpecial construction:Therefore extra low coupling capacitytypical 0.2 pF, high Common Mode RejectionDLow temperature coefficient of CTROrder SchematicPart Numbers4N25V/ 4N25GV/ 4N25VS/ 4N25GVS4N35V/ 4N35GV/ 4N35VS/ 4N35GVSSuffix:G = Leadform 10.16 mmS = Waterproofed deviceCTR-Ranking>20%>100%RemarksA waterproof construction is recommended for couplerswhere a pure water cleaning process is used instead of astandard-soldering/ cleaning process. In this case pleaseorder the part numbers with the suffix “S”.The waterproof construction corresponds with thecoupling system “S”, and does not belong to the partnumber itself.Standard parts are marked with the letter “A”.This coupling system indicator “A” or “S” is in a separate(second) line of the marking.Pin ConnectionB6C5E41A (+)2C (–)3n.c.2 (12)TELEFUNKEN SemiconductorsRev. A1, 03-Jun-9695 1080N25V(G)/ 4N35V(G) SeriesAbsolute Maximum RatingsInput (Emitter)ParametersReverse voltageForward currentForward surge currentPower dissipationJunction temperatureTest ConditionsSymbolVRIFIFSMPtotTjValue5603100125UnitVmAAmW°Ctp ≤ 10 msTamb ≤ 25°COutput (Detector)ParametersCollector emitter voltageEmitter collector voltageCollector currentCollector peak currentPower dissipationJunction temperatureTest ConditionsSymbolVCEOVCEOICICMPtotTjValue32750100150125UnitVVmAmAmW°Ctp/T = 0.5, tp ≤ 10 msTamb ≤ 25°CCouplerParametersIsolation test voltage (RMS)Total power dissipationAmbient temperature rangeStorage temperature rangeSoldering temperatureTest ConditionsTamb ≤ 25°CSymbolVIOPtotTambTstgTsdValue3.75250–55 to +100–55 to +125260UnitkVmW°C°C°C2 mm from case, t ≤ 10 sTELEFUNKEN SemiconductorsRev. A1, 03-Jun-963 (12)4N25V(G)/ 4N35V(G) SeriesMaximum Safety Ratings1) (according to VDE 0884)Input (Emitter)ParametersForward currentTest ConditionsSymbolIsiValue130UnitmAOutput (Detector)ParametersPower dissipationTest ConditionsTamb ≤ 25°CSymbolPsiValue265UnitmWCouplerParametersRated impulse voltageSafety temperature1)Test ConditionsSymbolVIOTMTsiValue6150UnitkV°CThis device is used for protective separation against electrical shock only within the maximum safety ratings.This must be ensured by using protective circuits in the applications.Derating Diagram300250200150100500094 9182PhototransistorPsi ( mW )IR DiodeIsi ( mA )255075100125150Tamb ( °C )4 (12)TELEFUNKEN SemiconductorsRev. A1, 03-Jun-9N25V(G)/ 4N35V(G) SeriesElectrical CharacteristicsTamb = 25°CInput (Emitter)ParametersForward voltageBreakdown voltageJunction capacitanceTest ConditionsIF = 50 mA 2)IC = 10 mAVR = 0, f = 1 MHzSymbolVFV(BR)CjMin.650Typ.1.2Max.1.4UnitVVpFOutput (Detector)ParametersCollector emitter breakdown voltageEmitter collector breakdown voltageCollector emitter cut-off currentTest ConditionsIC = 1 mAIE = 100 mAVCE = 10 V, IF = 0 2)VCE = 30 V, IF = 0 2)SymbolV(BR)CEOV(BR)ECOICEOICEOMin.32750500Typ.Max.UnitVVnAmACouplerParametersIsolation test voltage(RMS)Collector emitter saturation voltageCut-off frequencyCoupling capacitance2)Test Conditionsf = 50 Hz, t = 1 sIF = 50 mA, IC = 2 mAVCE = 5 V, IF = 10 mA,RL = 100 Wf = 1 MHzSymbolVIOVCEsatfcCkMin.3.75Typ.Max.UnitVVkHzpF0.31101Tamb = 100°CCurrent Transfer Ratio (CTR)ParametersTest ConditionsIC/IFVCE = 10 V, IF = 10 mAIC/IFVCE = 10 V, IF = 10 mAIC/IFVCE = 10 V, IF = 10 mA,Tamb = 100°CType4N25V(G)4N35V(G)4N35V(G)SymbolCTRCTRCTRMin.0.201.000.40Typ.11.5Max.UnitTELEFUNKEN SemiconductorsRev. A1, 03-Jun-965 (12)4N25V(G)/ 4N35V(G) SeriesSwitching Characteristics (Typical Values)VS = 5 VTypeyp4N25V(G)4N25GVS4N35V(G)4N35GVStd[ms]4.02.5tr[ms]7.03.0RL = 100 W (see figure 1)RL = 1 kW (see figure 2)ton[ms]ts[ms]tf[ms]toff[ms]IC[mA]ton[ms]toff[ms]IF[mA]11.00.36.77.05.025.042.510.0< 100.34.2< 102.09.025.010.0IF0RG= 50Wtp T= 0.01IF+ 10 VIC= 10 mA ;Adjusted throughinput amplitudetp= 50 msChannel IChannel II50W95 10793OscilloscopeRLw 1 MWCLv 20 pF100WFigure 1. Test circuit, non-saturated operationIF0RG= 50Wtp T= 0.01IF = 10 mA+ 5 VICtp= 50 msChannel IChannel II50W95 10844OscilloscopeRLw 1 MWCLv 20 pF1 kWFigure 2. Test circuit, saturated operation6 (12)TELEFUNKEN SemiconductorsRev. A1, 03-Jun-9N25V(G)/ 4N35V(G) SeriesInsulation Rated Parameters (according to VDE 0884)ParametersRoutine testLot testPartial discharge(sample test)testvoltagetest voltageTest Conditions100%, ttest = 1 stTr = 10 s, ttest = 60 s(see figure 3)VIO = 500 VVIO = 500 V, Tamb = 100°CVIO = 500 V, Tamb =150°C(construction test only)SymbolVpdVIOTMVpdRIORIORIOMin.1.661.310121011109Typ.Max.UnitkVkVkVWWWInsulationresistanceInsulation resistanceVIOTMVt1, t2 = 1 to 10 st3, t4 = 1 sVpdVIOWMVIORM0t3t194 9225ttest = 60 ststress = 62 st4tt2tTr =10 sFigure 3. Test pulse diagram for sample test according to DIN VDE 0884TELEFUNKEN SemiconductorsRev. A1, 03-Jun-967 (12)4N25V(G)/ 4N35V(G) SeriesTypical Characteristics (Tamb = 25°C, unless otherwise specified)300P t – Total Power Dissipation ( mW )toCoupled deviceI O – Collector Dark Current,CEwith open Base ( nA )250200Phototransistor10000VCE=10VIF=01000150IR-diode10050004080120Tamb – Ambient Temperature ( °C )100101096 11875102030405060708090100Tamb – Ambient Temperature ( °C )96 11700Figure 4. Total Power Dissipation vs. Ambient Temperature1000.0Figure 7. Collector Dark Current vs. Ambient Temperature1.000I C B – Collector Base Current ( mA )VCB=10VI F – Forward Current ( mA )100.00.10010.00.0101.00.1096 118620.20.40.60.81.01.21.41.61.82.0VF – Forward Voltage ( V )0.001196 1187610IF – Forward Current ( mA )100Figure 5. Forward Current vs. Forward Voltage1.51.41.31.21.11.00.90.80.70.60.5–30–20–1001020304050607080Tamb – Ambient Temperature ( °C )VCE=10VIF=10mAFigure 8. Collector Base Current vs. Forward Current100.00VCE=10VIC – Collector Current ( mA )10.00CTR r e l – Relative Current Transfer Ratio1.000.100.010.196 119041.010.0100.096 11874IF – Forward Current ( mA )Figure 6. Rel. Current Transfer Ratio vs. Ambient TemperatureFigure 9. Collector Current vs. Forward Current8 (12)TELEFUNKEN SemiconductorsRev. A1, 03-Jun-9N25V(G)/ 4N35V(G) SeriesTypical Characteristics (Tamb = 25°C, unless otherwise specified)100.0IC – Collector Current ( mA ) 10.0IF=50mACTR – Current Transfer Ratio ( % )20mA1000VCE=10V10mA5mA1001.02mA1mA100.10.196 1190511.010.0100.095 109760.1110100VCE – Collector Emitter Voltage ( V )IF – Forward Current ( mA )Figure 10. Collector Current vs. Collector Emitter ColtageV s CEa t – Collector Emitter Saturation Voltage ( V )1.00.820%0.6CTR=50%0.40.210%0110IC – Collector Current ( mA )100Figure 13. Current Transfer Ratio vs. Forward Current504030toff20100095 10974t n / t f f – Turn on / Turn off Time ( m s )ooSaturated OperationVS=5VRL=1kWton510152095 10972IF – Forward Current ( mA )Figure 11. Collector Emitter Sat. Voltage vs. Collector Current1000800VCE=10V6005V40020000.0195 10973Figure 14. Turn on/ off Time vs. Forward Current20Non SaturatedOperationVS=10VRL=100Wtoff10ton5t n / t f f – Turn on / Turn off Time ( m s )oo10095 10975h E – DC Current GainF1500.11100246810IC – Collector Current ( mA )IC – Collector Current ( mA )Figure 12. DC Current Gain vs. Collector CurrentFigure 15. Turn on/ off Time vs. Collector CurrentTELEFUNKEN SemiconductorsRev. A1, 03-Jun-969 (12)4N25V(G)/ 4N35V(G) SeriesDimensions in mmLeadform 10.16. mm (G-type)8.68.47.827.424..27.72.52.552.4.34.12.0.580.4810.36 9.960.350.251.66.46.21230.655.088.88.4technical drawingsaccording to DINspecifications95 1093210 (12)TELEFUNKEN SemiconductorsRev. A1, 03-Jun-9N25V(G)/ 4N35V(G) SeriesDimensions in mm8.68.47.827.424.94.52.552.4.34.13.30.350.252.0.580.4.68.41.66.46.21230.655.088.88.4technical drawingsaccording to DINspecifications95 10931TELEFUNKEN SemiconductorsRev. A1, 03-Jun-9611 (12)4N25V(G)/ 4N35V(G) Series
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operating systemswith respect to their impact on the health and safety of our employees and the public, as well as their impact onthe environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known asozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs andforbid their use within the next ten years. Various national and international initiatives are pressing for an earlier banon these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy ofcontinuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/0/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not containsuch substances.
We reserve the right to make changes to improve technical design and may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customerapplication by the customer. Should the buyer use TEMIC products for any unintended or unauthorizedapplication, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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TELEFUNKEN Semiconductors
Rev. A1, 03-Jun-96
