专利名称：Method of improving contact reliability for
electroplating
发明人：Panayotis C. Andricacos,W. Jean
Horkans,Keith T. Kwietniak,Peter S.Locke,Cyprian E. Uzoh
申请号：US09387856申请日：19990901公开号：US06331237B1公开日：20011218
专利附图：
摘要：A method of reducing etching of a seed layer by a plating solution. Prior tointroducing the semiconductor wafer with the seed layer into the plating solution, the
etching power of the plating solution is diminished.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
代理机构：Connolly Bove Lodge & Hutz, LLP
代理人：Robert M. Trepp, Esq
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