IRAM136-3023B资料

PD-97270 RevA

Integrated Power Hybrid IC for Low Voltage Motor Applications

Description

IRAM136-3023B

Series 30A, 150V

with Internal Shunt Resistor

International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design.

This advanced HIC is a combination of IR's low RDS(on) Advance Planar MOSFET Super Rugged technology and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in temperature monitor and over-current and over-temperature protections and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.

Features

• Integrated Gate Drivers

• Temperature Monitor and Protection • Overcurrent shutdown

• Low RDS(on) Advance Planar Super Rugged Technology • Undervoltage lockout for all channels

• Matched propagation delay for all channels • 5V Schmitt-triggered input logic • Cross-conduction prevention logic

• Lower di/dt gate driver for better noise immunity • Motor Power up to 4.0kW / 48~100 Vdc

• Fully Isolated Package, Isolation 2000VRMS min

Absolute Maximum RatingsParameterVBR(DSS)V+IO @ TC=25°CIO @ TC=100°CIOFPWMPDVISOTJ (MOSFET & IC)TCTSTGDescriptionMOSFET Blocking VoltagePositive Bus Input VoltageRMS Phase Current (Note 1)RMS Phase Current (Note 1)Pulsed RMS Phase Current (Note 1 and 2)PWM Carrier FrequencyPower Dissipation per MOSFET @ TC =25°CIsolation Voltage (1min)Maximum Operating Junction TemperatureOperating Case Temperature RangeStorage Temperature RangeValue150100301556202000+150-20 to +100-40 to +125°CkHzWVRMSAUnitsVTMounting Torque (M4 screw)0.7 to 1.17Nm+Note 1: Sinusoidal modulation at V=100V, TJ=150°C, FPWM=20kHz, modulation depth=0.8, pf=0.6, see Figure 3Note 2: tP<100ms; TC=25°C; FPWM=20kHz, limited by IBUS-TRIP, see Table \"Inverter Section Electrical Characteristics\"

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IRAM136-3023B

Internal Electrical Schematic – IRAM136-3023B

V+ (10)

Q1Q2Q3Q4Q5Q6R10A,B,C,D,E,FV (12)

-

R1R2R3VB1 (1)U, VS1 (2)VB2 (4)V, VS2 (5)VB3 (7)W, VS3 (8)

C1C2C3D15D14D1323 VS1222120191817VB2HO2VS2VB3HO3VS3LO1 16LO2 15R15HIN1 (13)HIN2 (14)HIN3 (15)LIN1 (16)LIN2 (17)LIN3 (18)F/TMON(19)ITRIP (20)VCC(21)

C4VSS(22)

THERMISTOR24 HO125 VB11 VCC2 HIN13 HIN24 HIN35 LIN1LIN2LIN3FITRIPENRCINVSSCOM6710111213R4R5R6IC1LO3 14R9POSISTORR8Q7R14C5C6R11C7R7R12R13 2 www.irf.com

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IRAM136-3023B

Absolute Maximum Ratings (Continued)Symbol ParameterIBDFPBR PeakVS1,2,3VB1,2,3VCCBootstrap Diode Peak Forward CurrentBootstrap Resistor Peak Power (Single Pulse)High side floating supply offset voltageHigh side floating supply voltageLow Side and logic fixed supply voltageInput voltage LIN, HIN, ITripMin------VB1,2,3 - 25-0.3T-0.3Max4.525.0VB1,2,3 +0.315020Lower of (VSS+15V) or VCC+0.3VUnitsConditionsAWVVVtP= 10ms,TJ = 150°C, TC=100°CtP=100μs, TC =100°CVIN-0.3V

Inverter Section Electrical Characteristics @TJ= 25°CSymbol ParameterV(BR)DSSƩV(BR)DSS / ƩTRDS(ON)Drain-to-Source Breakdown VoltageTemperature Coeff. Of Breakdown VoltageDrain-to-Source On ResistanceMin150--------------------------------56yp---0.163865381.21.0-----22------Max------8012280---1.91.81.251.10---±568UnitsConditionsVV/°CmƻVIN=5V, ID=250μAVIN=5V, ID=1.0mA(25°C - 150°C)ID=15A, VCC=15VID=15A, VCC=15V, TJ=125°CVIN=5V, V+=150VVIN=5V, V+=150V, TJ=125°CID=15AID=15A, TJ=125°CIF=1AIF=1A, TJ=125°CTJ=25°C TJ=25°CSee Figure 2IDSSZero Gate Voltage Drain CurrentBody Diode Forward Voltage DropBootstrap Diode Forward Voltage DropBootstrap Resistor ValueBootstrap Resistor ToleranceCurrent Protection Threshold (positive going)NjAVSDVVBDFMRBRƩRBR/RBRIBUS_TRIPVƻ%A www.irf.com

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IRAM136-3023B

Inverter Section Switching Characteristics @ TJ= 25°CSymbol ParameterEONEOFFETOTERECtRREONEOFFETOTERECtRRQGEASIAREARTurn-On Switching Loss1/Turn-Off Switching Loss1/Total Switching Loss1/Diode Reverse Recovery energy1/Diode Reverse Recovery time1/Turn-on Swtiching Loss1/Turn-off Switching Loss1/Total Switching Loss1/Diode Reverse Recovery energy1/Diode Reverse Recovery time1/Turn-On FET Gate Charge1/Single Pulse Avalanche EnergyAvalanche CurrentRepetitive Avalanche EnergyMin------------------------------------------yp395135530210240360117523027060---------Max110025013501000---97021011801000---4703632nsnCmJAmJ See CT1ID=36A, V+=75V, VGS=10VNote 3, 4Repetitive rating; pulse width limited by max. junction temperature. (Note 4)μJns See CT1ID=15A, V+=100VVCC=15V, L=2mH, TJ=125°CEnergy losses include \"tail\" and diode reverse recoveryμJUnitsConditionsID=15A, V+=100VVCC=15V, L=2mHEnergy losses include \"tail\" and diode reverse recovery

Note 3: Starting TJ = 25°C, L = 0.72mH, RG = 25ƻ, IAS = 36ANote 4: This is only applied to TO-220AB package1/T Based on Characterization Data only. Not subject to production test.

Recommended Operating Conditions Driver FunctionThe Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within therecommended conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies biased at 15V differential (Note 5).Symbol DefinitionVB1,2,3VS1,2,3VCCVINHigh side floating supply voltageHigh side floating supply offset voltageLow side and logic fixed supply voltageLogic input voltage LIN, HINMinVS+10Note 612VSSMaxVS+2015020VSS+5UnitsVVVNote 5: For more details, see IR2136 data sheetNote 6: Logic operational for Vs from COM-5V to COM+150V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details)

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IRAM136-3023B

Static Electrical Characteristics Driver Function @ TJ= 25°CVBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels (Static Electrical Characteristics are Based on Driver IC Data Sheet, Note 5).Symbol DefinitionVIHVILVCCUV+, VBSUV+VCCUV-, VBSUV-VCCUVH, VBSUVHVIN,ClampIQBSIQCCILKIIN+IIN-ITRIP+ITRIP-V(ITRIP)V(ITRIP,HYS)Logic \"0\" input voltageLogic \"1\" input voltageMin3.0yp------8.98.20.75.2---------20010030Max---0...0---5.51653.356030022010010---UnitsVVVVVVμAmAμAμAμAμAμAmVmVT---8.07.40.34.9------------------VCC and VBS supply undervoltage positive going thresholdVCC and VBS supply undervoltage negative going thresholdVCC and VBS supply undervoltage lock-out hysteresisInput Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10μAQuiescent VBS supply current VIN=0VQuiescent VCC supply current VIN=0VOffset Supply Leakage CurrentInput bias current VIN=5VInput bias current VIN=0VITRIP bias current VITRIP=5VITRIP bias current VITRIP=0VITRIP threshold Voltage ITRIP Input Hysteresis---0T440490---70 Dynamic Electrical Characteristics @ TJ= 25°CSymbol ParameterTONTOFFTFLINTBLT-TripDTMTTITripTFLT-CLR2/3/4/Min------100100220------------yp0.831.08200150290403.27.76.7Max------------36075---------UnitsConditionsμsμsnsnsnsnsμsmsVCC=VBS= 15V, ID=30A, V+=100VVIN=0 & VIN=5VVIN=0 & VIN=5VVBS=VCC=15VVCC= VBS= 15V, external dead time> 400nsVCC=VBS= 15V, ID=30A, V+=100VTC = 25°CTC = 100°CInput to Output propagation turn-on delay time (see fig.11)2/Input to Output propagation turn-off delay time (see fig. 11)2/Input Filter time (HIN, LIN)3/ITRIP Blancking Time3/Dead Time (VBS=VDD=15V)3/Matching Propagation Delay Time (On & Off)3/ITrip to six switch to turn-off propagation delay (see fig. 2)4/Post ITrip to six switch to turn-off clear time (see fig. 2)4/ Based on Characterization Data only. Not subject to production test. Based on Driver IC Data Sheet. Verified by Design. Not subject to production test.www.irf.com

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IRAM136-3023B

Thermal and Mechanical CharacteristicsSymbol ParameterRth(J-C)Rth(C-S)CD5/

Min------3.5yp1.20.1---Max1.4------Thermal resistance, FET5/Thermal resistance, C-S5/Creepage DistanceUnitsConditionsFlat, greased surface. Heatsink °C/Wcompound thermal conductivity 1W/m°KmmSee outline Drawings Based on Characterization Data only. Not subject to production test.

Internal Current Sensing Resistor - Shunt CharacteristicsSymbol ParameterRShuntTCoeffPShuntTRangeResistanceTemperature CoefficientPower DissipationTemperature RangeMin8.10----20T

yp8.3---------Max8.52004.5125UnitsConditionsmƻppm/°CTC = 25°CW°C-40°C< TC <100°C ParameterR25R125BDefinitionResistanceResistance6/B-constant (25-50°C)6/ Internal NTC - Thermistor CharacteristicsMin97Typ100Max1032.804335125---UnitsConditionskƻkƻk°CmW/°CTC = 25°CTC = 25°CTC = 125°CR2 = R1e [B(1/T2 - 1/T1)]2.252.52T416250-20------1Temperature RangeTyp. Dissipation constant6/ Verified by Design. Not subject to production test.

Input-Output Logic Level Table

V+

Hin1,2,3(13,14,15)IC DriverHoU,V,W(2,5,8)LoITRIP0001HIN1,2,3011XLIN1,2,3101XU,V,WV+0XXLin1,2,3(16,17,18)

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IRAM136-3023B

Figure 1. Input/Output Timing Diagram

HIN1,2,3

LIN1,2,3

50%50%ITRIP

U,V,W

50%50% TITRIP TFLT-CLR

Figure 2. ITRIP Timing Waveform

Note 7: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load.

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IRAM136-3023B

Module Pin-Out Description

Pin123456710111213141516171819202122NameVB1U, VS1NAVB2V,VS2NAVB3W,VS3NAV+NAV-HIN1HIN2HIN3LIN1LIN2LIN3Fault/TMONISenseVCCVSSDescriptionHigh Side Floating Supply Voltage 1Output 1 - High Side Floating Supply Offset VoltagenoneHigh Side Floating Supply voltage 2Output 2 - High Side Floating Supply Offset VoltagenoneHigh Side Floating Supply voltage 3Output 3 - High Side Floating Supply Offset VoltagenonePositive Bus Input VoltagenoneNegative Bus Input VoltageLogic Input High Side Gate Driver - Phase 1Logic Input High Side Gate Driver - Phase 2Logic Input High Side Gate Driver - Phase 3Logic Input Low Side Gate Driver - Phase 1Logic Input Low Side Gate Driver - Phase 2Logic Input Low Side Gate Driver - Phase 3Temperature Monitor and Fault FunctionCurrent Monitor+15V Main SupplyNegative Main Supply

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IRAM136-3023B

Typical Application Connection IRAM136-3023B

1BOOT-STRAPCAPACITORSUVB1VB2IRAM136-3023B3-Phase ACMOTORV+VVB3WV+DC BUSCAPACITORSV-HIN1HIN2HIN3LIN1LIN2LIN3FLT/TMONITRIPDate Code Lot #+5VCONTROLLER12kohmFault & Temp MonitorIMonitorVcc(15 V)+5VVSS22+15V0.1m10m

1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1μF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).

5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 6. Fault/TMON Monitor pin must be pulled-up to +5V.

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IRAM136-3023B

26Maximum Output Phase RMS Current - A242220181614121082002468101214161820PWM Switching Frequency - kHzTC= 80ºCTC= 90ºCTC= 100ºC

Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=100V, TJ=150°C, Modulation Depth=0.8, PF=0.6

20Maximum Output Phase RMS Current - A1816141210820FPWM= 12kHz FPWM = 16kHzFPWM = 20kHz110Modulation Frequency - Hz100Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=100V, TJ=100°C, Modulation Depth=0.8, PF=0.6

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IRAM136-3023B

240220200Total Power Loss- W18016014012010080604020002468101214161820PWM Switching Frequency - kHzIOUT= 18A IOUT = 15AIOUT = 12A350300Total Power Loss - W250200150100500Figure 5. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=100V, TJ=150°C, Modulation Depth=0.8, PF=0.6

FPWM = 20kHz FPWM = 16kHzFPWM = 12kHz024681012141618202224Output Phase Current - ARMSFigure 6. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=100V, TJ=150°C, Modulation Depth=0.8, PF=0.6

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IRAM136-3023B

15014013012011010090807060504030201000246Max Allowable Case Temperature - ºC

FPWM= 12kHz FPWM= 16kHzFPWM= 20kHz81012141618202224Output Phase Current - ARMSFigure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=100V, TJ=150°C, Modulation Depth=0.8, PF=0.6

160MOSFET Junction Temperature - °CTJ avg = 1.4026 x TTherm + 6.4583 150140130120110102.365707580859095100105110100Internal Thermistor Temperature Equivalent Read Out - °C Figure 8. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature 12 www.irf.com 元器件交易网www.cecb2b.com

IRAM136-3023B

5.04.5Thermistor Pin Read-Out Voltage - V4.03.53.02.52.01.51.00.5TTHERMRTHERMTTHERMRTHERMTTHERM°Cƻ°Cƻ°C-4043971192510000090-35-30-25-20-15-10-5051015203088599219722515818811151037846579628847163235701227250020971016265112708030304550556065707580857922263167506774090433195270912222418322151841263510566887395100105110115120125130135140145150RTHERMƻ7481633753844594393433802916252221901907166514591282+5VREXTVThermRThermMin Avg.Max0.0-40-30-20-100102030405060708090100110120130140150Thermistor Temperature - °C16.015.014.013.012.011.010.09.08.07.06.05.04.03.02.01.00.0

Figure 9. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and

Normal Thermistor Resistance values vs. Temperature Table.

15ȝFRBS+15VDBSVccHHINLHINVSSCOMVBCBSHoVsLoRG2RG1V+

Recommended Bootstrap Capacitor - ȝF10ȝFHHINLHINU,V,W6.8ȝF4.7ȝFVSSGND3.3ȝF0510

PWM Frequency - kHz

1520

Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency

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IRAM136-3023B

Figure 11. Switching Parameter Definitions VDS50%HIN/LIN

IDID90% IDVDSHIN/LIN90% ID50%VDS50%HIN/LINHIN/LIN50%VCE10% ID10% IDtrTONFigure 11a. Input to Output propagation turn-on

delay time.

TOFFtf Figure 11b. Input to Output propagation turn-off

delay time.

Figure 11c. Diode Reverse Recovery.

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IRAM136-3023B

Figure CT1. Switching Loss Circuit

IN

IO

Figure CT2. S.C.SOA Circuit

IN

IO

Figure CT3. R.B.SOA Circuit

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IRAM136-3023B

Package Outline

Missing pins: 3, 6, 9, 11

Missing Pin : 3,6,9,11

note3note4TENTATIVEԘIRAM136-3023Bnote2P 4DB00󰀄note5󰀂󰀂Ԛnote1: Unit Tolerance is +0.5mm,

᫝᫝᫝ Unless Otherwise Specified.

note2: Mirror Surface Mark indicates Pin1 Identification.note3: Part Number Marking.

Characters Font in this drawing differs from ᫝᫝᫝᫝ Font shown on Module.

ԙnote4: Lot Code Marking.

Characters Font in this drawing differs from ᫝᫝᫝᫝ Font shown on Module.

note5: “P” Character denotes Lead Free.

Characters Font in this drawing differs from Font shown on Module.

For mounting instruction see AN-1049

Data and Specifications are subject to change without notice

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