Semiconductor device with metal silicide blocking

专利名称：Semiconductor device with metal silicide

blocking region and method ofmanufacturing the same

发明人：I-Hsiang Hung,Wei-Der Sun,Ching-Chen Hao申请号：US14144953申请日：20131231公开号：US09871035B2公开日：20180116

专利附图：

摘要：Embodiments of mechanisms for forming a semiconductor device are provided.The semiconductor device includes a gate stack on a semiconductor substrate. In someembodiments, the semiconductor device further includes a semiconductor element, suchas for example, a resistor, on the semiconductor substrate. The semiconductor deviceincludes a metal silicide layer on at least one of the gate stack, the source region, and thedrain region. The semiconductor device also includes a blocking region in a portion of thesemiconductor element. In some embodiments, the blocking region includes firstdopants and second dopants with an atomic radius smaller than that of the first dopants.

申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

地址：Hsin-Chu TW

国籍：TW

代理机构：Birch, Stewart, Kolasch & Birch, LLP

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