专利名称：Structure of vertical strained silicon devices发明人：Kangguo Cheng,Dureseti
Chidambarrao,Rama Divakaruni,Oleg G.Gluschenkov
申请号：US10605227申请日：20030916公开号：US07170126B2公开日：20070130
专利附图：
摘要：A trench capacitor vertical-transistor DRAM cell in a SiGe wafer compensates foroverhang of the pad nitride by forming an epitaxial strained silicon layer on the trench
walls that improves transistor mobility, removes voids from the poly trench fill andreduces resistance on the bitline contact.
申请人：Kangguo Cheng,Dureseti Chidambarrao,Rama Divakaruni,Oleg G. Gluschenkov
地址：Beacon NY US,Weston CT US,Ossining NY US,Poughkeepsie NY US
国籍：US,US,US,US
代理人：Eric W. Petraske,Joseph P. Abate
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