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Semiconductor structure and method for making the

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专利名称:Semiconductor structure and method for

making the same

发明人:Meng-Jen Wang申请号:US12794294申请日:20100604公开号:US08415807B2公开日:20130409

专利附图:

摘要:The present invention relates to a semiconductor structure and a method formaking the same. The method includes the following steps: (a) providing a first wafer anda second wafer; (b) disposing the first wafer on the second wafer; (c) removing part of the

first wafer, so as to form a groove; (d) forming a through via in the groove; and (e)forming at least one electrical connecting element on the first wafer. Therefore, thewafers are penetrated and electrically connected by forming only one conductive via,which leads to a simplified process and a low manufacturing cost.

申请人:Meng-Jen Wang

地址:Kaohsiung TW

国籍:TW

代理机构:McCracken & Frank LLC

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