Semiconductor structure and method for making the

专利名称：Semiconductor structure and method for

making the same

发明人：Meng-Jen Wang申请号：US12794294申请日：20100604公开号：US08415807B2公开日：20130409

专利附图：

摘要：The present invention relates to a semiconductor structure and a method formaking the same. The method includes the following steps: (a) providing a first wafer anda second wafer; (b) disposing the first wafer on the second wafer; (c) removing part of the

first wafer, so as to form a groove; (d) forming a through via in the groove; and (e)forming at least one electrical connecting element on the first wafer. Therefore, thewafers are penetrated and electrically connected by forming only one conductive via,which leads to a simplified process and a low manufacturing cost.

申请人：Meng-Jen Wang

地址：Kaohsiung TW

国籍：TW

代理机构：McCracken & Frank LLC

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