专利名称：Self-aligned contact
发明人：Kangguo Cheng,Xin Miao,Wenyu Xu,Chen
Zhang
申请号：US15193831申请日：20160627公开号：US10068799B2公开日：20180904
专利附图：
摘要：A semiconductor device includes a gate structure having a gate conductor and asidewall spacer. A partial dielectric cap is formed on the gate conductor and extends lessthan a width of the gate conductor. A self-aligned contact is formed adjacent to the
sidewall spacer of the gate structure and is electrically isolated from the gate conductorby the partial dielectric cap and the sidewall spacer.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
地址：Armonk NY US
国籍：US
代理机构：Tutunjian & Bitetto, P.C.
代理人：Vazken Alexanian
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