专利名称:Self-aligned contact
发明人:Kangguo Cheng,Xin Miao,Wenyu Xu,Chen
Zhang
申请号:US15193831申请日:20160627公开号:US10068799B2公开日:20180904
专利附图:
摘要:A semiconductor device includes a gate structure having a gate conductor and asidewall spacer. A partial dielectric cap is formed on the gate conductor and extends lessthan a width of the gate conductor. A self-aligned contact is formed adjacent to the
sidewall spacer of the gate structure and is electrically isolated from the gate conductorby the partial dielectric cap and the sidewall spacer.
申请人:INTERNATIONAL BUSINESS MACHINES CORPORATION
地址:Armonk NY US
国籍:US
代理机构:Tutunjian & Bitetto, P.C.
代理人:Vazken Alexanian
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