Method for making a semiconductor structure using

专利名称：Method for making a semiconductor

structure using silicon germanium

发明人：Marius K. Orlowski,Chun-Li Liu,Choh-Fei Yeap申请号：US10851347申请日：20040521公开号：US07195963B2公开日：20070327

专利附图：

摘要：Silicon carbon is used as a diffusion barrier to germanium so that a silicon layercan be subsequently formed without being contaminated with germanium. This is usefulin separating silicon layers from silicon germanium layers in situations in which both

silicon and silicon germanium are desired to be present on the same semiconductordevice such as for providing different materials for optimizing carrier mobility between Nand P channel transistors and for a raised source/drain of silicon in the case of a silicongermanium body.

申请人：Marius K. Orlowski,Chun-Li Liu,Choh-Fei Yeap

地址：Austin TX US,Mesa AZ US,Austin TX US

国籍：US,US,US

代理人：James L. Clingan, Jr.,David G. Dolezal

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