Low dielectric constant film material, film and se

专利名称：Low dielectric constant film material, film

and semiconductor device using suchmaterial

发明人：Yoshihiro Nakata,Shun-ichi

Fukuyama,Katsumi Suzuki,Ei Yano,TamotsuOwada,Iwao Sugiura

申请号：US09797865申请日：20010305公开号：US06613834B2公开日：20030902

摘要：A low dielectric film forming material contains siloxane resin and

polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formedwhich contains siloxane resin and polycarbosilane bonded to the siloxane resin. Materialof a low dielectric film is provided which is suitable for inter-level insulating film material.A semiconductor device is also provided which has a low dielectric constant film and highreliability.

申请人：FUJITSU LIMITED

代理机构：Armstrong, Westerman & Hattori, LLP

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