Single crystal GaN substrate, method of growing sa

专利名称：Single crystal GaN substrate, method of

growing same and method of producingsame

发明人：Kensaku Motoki,Takuji Okahisa,Seiji

Nakahata,Ryu Hirota,Koji Uematsu

申请号：US10246559申请日：20020919公开号：US06667184B2公开日：20031223

专利附图：

摘要：Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal

is grown on the seed implanted undersubstrate by a facet growth method. The facetgrowth makes facet pits above the seeds. The facets assemble dislocations to the pitbottoms from neighboring regions and make closed defect accumulating regions (H)under the facet bottoms. The closed defect accumulating regions (H) arrest dislocationspermanently. Release of dislocations, radial planar defect assemblies and linear defectassemblies are forbidden. The surrounding accompanying low dislocation single crystalregions (Z) and extra low dislocation single crystal regions (Y) are low dislocation densitysingle crystals.

申请人：SUMITOMO ELECTRIC INDUSTRIES, LTD.

代理机构：McDermott, Will & Emery

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