专利名称:Optical measurement of planarized features发明人:Syed Shoaib Hasan Zaidi,Gangadhara S.
Mathad
申请号:US09966506申请日:20010928
公开号:US20030063272A1公开日:20030403
专利附图:
摘要:There is provided a method for measuring planarized features on a wafer of asemiconductor device. The planarized features on the wafer are illuminated. A reflectedlight beam with respect to the planarized features is detected. Optical characteristics of
the reflected light beam are analyzed to determine information corresponding to theplanarized features. Preferably, the analyzing step maximizes an analysis of the opticalcharacteristics based upon a simplified geometry of the planarized features with respectto a geometry of similar, un-planarized features. Moreover, preferably, the analyzingstep maximizes an analysis of the optical characteristics based upon a reduction incomplexity of the planarized features due to a similarity in refractive indexescorresponding to a bulk silicon substrate and a poly silicon fill of the semiconductordevice.
申请人:ZAIDI SYED SHOAIB HASAN,MATHAD GANGADHARA S.
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