Plasma processing equipment

专利名称：Plasma processing equipment发明人：岩瀬 拓,手束 勉,横川 賢悦申请号：JP2018049014申请日：20180316公开号：JP2019160714A公开日：20190919

专利附图：

摘要：[PROBLEMS] To improve the uniformity of plasma in the radial direction,improve the efficiency of plasma generation, and improve the process yield. A processingchamber in which plasma is formed inside, a sample table on which a sample to beprocessed is placed and held on the upper surface, an upper electrode disposed

opposite to the sample table, a shower plate, and a dielectric In the plasma processingapparatus including the upper ring plate and the high frequency power source forapplying high frequency power to the upper electrode, the sample stage includes adielectric susceptor ring disposed around the outer periphery of the upper surface, andthe susceptor. A lower ring-shaped plate made of a dielectric material disposed at aposition lower than the upper surface of the susceptor ring on the outer peripheral sideof the ring, and the height difference between the upper surface of the lower ring-shaped plate and the upper surface of the sample is The distance Gmm from the lowerelectrode, the frequency fHz of the first high-frequency power, and the value within therange of 5 mm before and after the expression −0.1G−0.06f−4.4lnP + 22 using thepressure PPa in the processing chamber. It was way. [Selection] Figure 1

申请人：株式会社日立ハイテクノロジーズ

地址：東京都港区西新橋一丁目２４番１４号

国籍：JP

代理人：ポレール特許業務法人

更多信息请下载全文后查看