Memory devices including multi-bit memory cells ha

专利名称：Memory devices including multi-bit memory

cells having magnetic and resistive memoryelements and related methods

发明人：In-Gyu Baek,Jang-Eun Lee,Se-Chung

Oh,Kyung-Tae Nam,Jun-Ho Jeong

申请号：US11804327申请日：20070517

公开号：US200801809A1公开日：20080731

专利附图：

摘要：An integrated circuit memory device may include an integrated circuit substrate,

and a multi-bit memory cell on the integrated circuit substrate. The multi-bit memorycell may be configured to store a first bit of data by changing a first characteristic of themulti-bit memory cell and to store a second bit of data by changing a second

characteristic of the multi-bit memory cell. Moreover, the first and second characteristicsmay be different. Related methods are also discussed.

申请人：In-Gyu Baek,Jang-Eun Lee,Se-Chung Oh,Kyung-Tae Nam,Jun-Ho Jeong

地址：Seoul KR,Gyeonggi-do KR,Gyeonggi-do KR,Gyeonggi-do KR,Gyeonggi-do KR

国籍：KR,KR,KR,KR,KR

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