BC212, BC212B, BC213Amplifier Transistors
PNP Silicon
http://onsemi.com
MAXIMUM RATINGS
RatingCollector-Emitter VoltageBC212BC213Collector-Base VoltageBC212BC213Emitter-Base VoltageCollector Current – ContinuousTotal Device Dissipation@ TA = 25°CDerate above 25°CTotal Device Dissipation@ TC = 25°CDerate above 25°COperating and Storage JunctionTemperature RangeSymbolVCEOValue–50–30Vdc–60–45–5.0–1003502.81.08.0–55 to+150VdcmAdcmWmW/°CWattsmW/°C°CUnitVdc2BASE3EMITTERCOLLECTOR1VCBOVEBOICPD1PD23TJ, TstgTO–92CASE 29STYLE 17THERMAL CHARACTERISTICS
CharacteristicThermal Resistance,Junction to AmbientThermal Resistance,Junction to CaseSymbolRθJARθJCMax357125Unit°C/W°C/WMARKING DIAGRAMSBC21xxYWWBC21xxxxYWW= Specific Device Code= 2, 2B, or 3= Year= Work WeekORDERING INFORMATION
DeviceBC212BC212BBC212BRL1BC212BZL1BC213
PackageTO–92TO–92TO–92TO–92TO–92
Shipping5000 Units/Box5000 Units/Box2000/Tape & Reel2000/Ammo Pack5000 Units/Box
© Semiconductor Components Industries, LLC, 20011
October, 2001 – Rev. 2
Publication Order Number:
BC212/D
元器件交易网www.cecb2b.com
BC212, BC212B, BC213
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
CharacteristicCollector–Emitter Breakdown Voltage(IC = –2.0 mAdc, IB = 0)Collector–Base Breakdown Voltage(IC = –10 mA, IE = 0)Emitter–Base Breakdown Voltage(IE = –10 mAdc, IC = 0)Collector–Emitter Leakage Current(VCB = –30 V)Emitter–Base Leakage Current(VEB = –4.0 V, IC = 0)BC212BC213BC212BC213BC212BC213BC212BC213BC212BC213SymbolV(BR)CEOV(BR)CBOV(BR)EBOICBOIEBOMin–50–30–60–45–5–5––––Typ––––––––––Max–––––––15–15–15–15UnitVdcVdcVdcnAdcnAdcON CHARACTERISTICS
DC Current Gain(IC = –10 µAdc, VCE = –5.0 Vdc)(IC = –2.0 mAdc, VCE = –5.0 Vdc)(IC = –100 mAdc, VCE = –5.0 Vdc) (Note 1.)Collector–Emitter Saturation Voltage(IC = –10 mAdc, IB = –0.5 mAdc)(IC = –100 mAdc, IB = –5.0 mAdc) (Note 1.)Base–Emitter Saturation Voltage(IC = –100 mAdc, IB = –5.0 mAdc)Base–Emitter On Voltage(IC = –2.0 mAdc, VCE = –5.0 Vdc)BC212BC213BC212BC213BC212BC213VCE(sat)hFE–40406080––––––0.6––––120140–0.10–0.25–1.0–0.62––––––Vdc––0.6–1.4–0.72VdcVdcVBE(sat)VBE(on)DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)Common–Base Output Capacitance(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)Noise Figure(IC = –0.2 mAdc, VCE = –5.0 Vdc,RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz)Small–Signal Current Gain(IC = –2.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)BC212BC213fTMHz–––280360–––6.0pFdB–hfe6080200––––10–––400CobNFBC212, BC213BC212BC213BC212B1.Pulse Test: Tp 300 s, Duty Cycle 2.0%.http://onsemi.com
2
元器件交易网www.cecb2b.com
BC212, BC212B, BC213
2.0hFE, NORMALIZED DC CURRENT GAIN1.51.00.70.5VCE = -10 VTA = 25°CV, VOLTAGE (VOLTS)-1.0-0.9-0.8-0.7-0.6-0.5-0.4-0.3-0.2-0.10.2-0.2-0.5-1.0-2.0-5.0-10-20-50-100-200IC, COLLECTOR CURRENT (mAdc)
0-0.1-0.2VCE(sat) @ IC/IB = 10-0.5-1.0-2.0-5.0-10-20IC, COLLECTOR CURRENT (mAdc)
-50-100TA = 25°CVBE(sat) @ IC/IB = 10VBE(on) @ VCE = -10 V0.3Figure 1. Normalized DC Current Gain
fT, CURRENT-GAIN Ċ BANDWIDTH PRODUCT (MHz)Figure 2. “Saturation” and “On” Voltages
400300
C, CAPACITANCE (pF)2001501008060403020-0.5-1.0-2.0-3.0-5.0-10-20-30IC, COLLECTOR CURRENT (mAdc)
-50VCE = -10 VTA = 25°C107.05.0
CibTA = 25°C3.02.0
Cob1.0
-0.4-0.6-1.0-2.0-4.0-6.0-10VR, REVERSE VOLTAGE (VOLTS)
-20-30-40Figure 3. Current–Gain – Bandwidth ProductFigure 4. Capacitances
0.50.3
VCE = -10 Vf = 1.0 kHzTA = 25°Crb′, BASE SPREADING RESISTANCE (OHMS)1.0ho b , OUTPUT ADMITTANCE (OHMS)150140130120110100-0.1VCE = -10 Vf = 1.0 kHzTA = 25°C0.10.050.03
0.01-0.1-0.2-0.5-1.0-2.0IC, COLLECTOR CURRENT (mAdc)
-5.0-10-0.2-0.3-0.5-1.0-2.0-3.0IC, COLLECTOR CURRENT (mAdc)
-5.0-10Figure 5. Output AdmittanceFigure 6. Base Spreading Resistance
http://onsemi.com
3
元器件交易网www.cecb2b.com
BC212, BC212B, BC213
PACKAGE DIMENSIONS
TO–92 (TO–226)CASE 29–11ISSUE AL
ARPLSEATINGPLANE
BNOTES:
1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.
4.LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K MINIMUM.
INCHESMINMAX0.1750.2050.1700.2100.1250.1650.0160.0210.0450.0550.0950.1050.0150.0200.500---0.250---0.0800.105---0.1000.115---0.135---MILLIMETERSMINMAX4.455.204.325.333.184.190.4070.5331.151.392.422.660.390.5012.70---6.35---2.042.66---2.2.93---3.43---KXXHV1DGJCNNSECTION X–XDIMABCDGHJKLNPRVSTYLE 17:
PIN 1.COLLECTOR
2.BASE3.EMITTER
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changeswithout further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must bevalidated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury ordeath may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and holdSCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonableattorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claimalleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone: 81–3–5740–2700Email: r14525@onsemi.com
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