Method of forming a contact in a semiconductor dev

专利名称：Method of forming a contact in a

semiconductor device

发明人：HONG JEONG-EUI申请号：US31795399申请日：19990525公开号：US6180522B1公开日：20010130

摘要：The present invention relates to a method of forming a contact insemiconductor device, more particularly, to a method of forming a tungsten bitlinecontact in a semiconductor device which prevents the decrease of impurity ion density inan impurity region and reduces both contact resistance between a plug and the impurityregion and leakage current in a junction by forming an extra barrier layer in a metalbarrier layer having been deposited on the impurity region, thereby improving operationspeed of a semiconductor device and lessening power consumption. The a presentinvention includes the steps of forming an insulating layer on a semiconductor substratewherein an impurity diffusion region is formed on a predetermined portion of thesubstrate, forming a contact hole exposing a portion of the impurity diffusion region byremoving a predetermined portion of the insulating layer, forming a first conductive layeron the first insulating layer and in the contact hole, forming a second conductive layer onthe first conductive layer, forming a third conductive layer at an interface between thefirst conductive layer and the impurity diffusion region, forming a buried layer forpreventing ion-diffusion inside the second conductive layer, forming a conductive plugfilling up the contact hole on a predetermined portion of the second conductive layer,

and forming a fourth conductive layer on the second conductive layer wherein the fourthconductive layer is electrically connected to an upper surface of the plug.

申请人：HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.

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