Charged-particle beam exposure method and apparatu

专利名称：Charged-particle beam exposure method

and apparatus

发明人：Sakamoto, Kiichi,Oae, Yoshihisa,Fueki,

Shunsuke,Yamada, Akio,Yasuda, Hiroshi

申请号：EP90122519.3申请日：19901126公开号：EP0434990A2公开日：19910703

摘要：A charged-particle beam exposure method which has a stencil mask formedwith a plurality of mask patterns, deflects a beam of charged particles to a mask patternselected from among the plurality of mask patterns and shapes the beam, and performswafer exposure by deflecting the shaped beam and illuminating the same onto a wafer,wherein the improvement comprises the steps of (a) holding mask information data,which are information for deflecting the charged particle beam to the selected maskpattern and in which an index is provided every mask pattern of the stencil mask, in amask memory, (b) holding pattern exposure data, which are information for designating amask pattern by the use of the index of each mask pattern held in the mask memory andfor deflecting the charged particle beam shaped with the designated mask pattern to apredetermined region on the wafer, in a data memory; and (c) deflecting the chargedparticle beam on the stencil mask and shaping the beam by the use of the maskinformation data output from the mask memory in response to the index designated inthe pattern exposure data.

申请人：FUJITSU LIMITED

地址：1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP

国籍：JP

代理机构：Seeger, Wolfgang, Dipl.-Phys.

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