NTB5605PG资料

NTB5605P

Power MOSFET

−60 Volt, −18.5 Amp

P−Channel, D2PAK

Features

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V(BR)DSS−60 VRDS(on) TYP120 mW @ −5.0 VP−ChannelDID MAX−18.5 A•Designed for Low RDS(on)

•Withstands High Energy in Avalanche and Commutation Modes•Pb−Free Packages are Available

Applications

••••

Power Supplies

PWM Motor ControlConverters

Power Management

GSMAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Drain−to−Source VoltageGate−to−Source VoltageContinuous Drain Current (Note 1)Power Dissipation(Note 1)

Pulsed Drain Current

SteadyStateSteadyState

TA = 25°CTA = 25°C

SymbolVDSSVGSIDPDIDMTJ,TSTGEAS

Value−60$20−18.588−55−55 to175338

UnitVVAWA°CmJ

123D2PAKCASE 418BSTYLE 2

4MARKING DIAGRAM& PIN ASSIGNMENT

4Drain

tp = 10 ms

NTB5605PGAYWW

Operating Junction and Storage TemperatureSingle Pulse Drain−to−Source AvalancheEnergy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A,L = 3.0 mH, RG = 25 W)

Lead Temperature for Soldering Purposes(1/8 in from case for 10 s)

1Gate2Drain3

Source

TL

260°C

THERMAL RESISTANCE RATINGS

Parameter

Junction−to−Case (Drain) – Steady State

SymbolRqJC

Max1.7

Unit°C/W

NTB5605PAYWWG= Device Code

= Assembly Location= Year

= Work Week

= Pb−Free Package

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.

1.When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in2).2.When surface mounted to an FR4 board using the minimum recommendedpad size (Cu Area 0.41 in2).

ORDERING INFORMATION

DeviceNTB5605PNTB5605PGNTB5605PT4NTB5605PT4G

PackageD2PAKD2PAK(Pb−Free)D2PAKD2PAK(Pb−Free)

Shipping†50 Units/Rail50 Units/Rail800 Tape & Reel800 Tape & Reel

†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 20051

August, 2005 − Rev. 2

Publication Order Number:

NTB5605P/D

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NTB5605P

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown VoltageDrain−to−Source Breakdown Voltage Temperature CoefficientZero Gate Voltage Drain Current

V(Br)DSSV(Br)DSS/TJ

IDSS

VGS = 0 VVDS = −60 V

Gate−to−Source Leakage CurrentON CHARACTERISTICS (Note 3)Gate Threshold VoltageDrain−to−Source On ResistanceForward TransconductanceDrain−to−Source On Voltage

VGS(th)RDS(on)gFSVDS(on)

VGS = VDS, ID = −250 mAVGS = −5.0 V, ID = −8.5 AVGS = −5.0 V, ID = −17 AVDS = −10 V, ID = −8.5 AVGS = −5.0 V, ID = −8.5 A

−1.0

−1.512014012

−1.3−2.0140

VmWSV

IGSS

TJ = 25°CTJ = 125°C

VGS = 0 V, ID = −250 mA

−60

−

−1.0−10\"100

nAVmV/°CmA

Symbol

Test Condition

Min

Typ

Max

Unit

VDS = 0 V, VGS = \"20 V

CHARGES, CAPACITANCES AND GATE RESISTANCEInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceTotal Gate ChargeGate−to−Source ChargeGate−to−Drain Charge

SWITCHING CHARACTERISTICS (Note 4)Turn−On Delay TimeRise Time

Turn−Off Delay TimeFall Time

DRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage

VSD

VGS = 0 VIS = −17 A

TJ = 25°CTJ = 125°C

−1.55−1.460

VGS = 0 V, dIS/dt = 100 A/ms,

IS = −17 A

39210.14

nCns

−2.5

V

td(on)trtd(off)tf

VGS = −5.0 V, VDD = −30 V,ID = −17 A, RG = 9.1 W

12.51222975

2518358150

ns

CissCossCrssQG(TOT)QGSQGD

VGS = −5.0 V, VDS = −48 V,

ID = −17 AVGS = 0 V, f = 1.0 MHz,

VDS = −25 V

73021167134.07.0

119030012022

nCpF

Reverse Recovery TimeCharge TimeDischarge Time

Reverse Recovery Charge

trrtatbQRR

3.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4.Switching characteristics are independent of operating junction temperatures.

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NTB5605P

40−ID, DRAIN CURRENT (AMPS)353025201510500VGS = −3.5 VVGS = −3 V246813579−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)100046123578−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)9VGS = −10 VVGS = −9 VVGS = −8 VVGS = −7 VTJ = 25°C40−ID, DRAIN CURRENT (AMPS)VGS = −6 VVGS = −5.5 VVGS = −5 VVGS = −4.5 VVGS = −4 VVDS = −10 VTJ = −55°C30TJ = 25°CTJ = 125°C2010Figure 1. On−Region CharacteristicsRDS(on), DRAIN−TO−SOURCE RESISTANCE (W)RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)Figure 2. Transfer Characteristics0.50.450.40.350.30.250.20.150.10.0500510TJ = −55°C15202530TJ = 25°CTJ = 125°CVGS = −5.0 V0.250.2250.20.1750.150.1250.10.0750.050.02500TJ = 25°CVGS = −5.0 VVGS = −10 V3691215182124−ID, DRAIN CURRENT (AMPS)−ID, DRAIN CURRENT (AMPS)Figure 3. On−Resistance vs. Drain Current andTemperatureRDS(on), DRAIN−TO−SOURCE RESISTANCE(NORMALIZED)21.81.61.41.210.80.60.40.20−501−250255075100125150510000ID = −8.5 AVGS = −5.0 V−IDSS, LEAKAGE (nA)1000Figure 4. On−Resistance vs. Drain Current andGate VoltageVGS = 0 VTJ = 150°C100TJ = 125°C1010152025303045505560TJ, JUNCTION TEMPERATURE (°C)−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with

TemperatureFigure 6. Drain−to−Source Leakage Current

vs. Voltage

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NTB5605P

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)24002200200018001600140012001000800600400200010Crss5−VGS0−VDS5101520Coss876321004812ID = −17 ATJ = 25°C016QGSQTVGSQDSVDS60VDS = 0 VCissVGS = 0 VTJ = 25°CC, CAPACITANCE (pF)45CrssCiss301525GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE(VOLTS)Qg, TOTAL GATE CHARGE (nC)Figure 7. Capacitance Variation1000−IS, SOURCE CURRENT (AMPS)20Figure 8. Gate−to−Source andDrain−to−Source Voltage vs. Total ChargeVGS = 0 VTJ = 25°C15t, TIME (ns)100trtftd(off)1010td(on)VDD = −30 VID = −17 AVGS = −5.0 V110RG, GATE RESISTANCE (W)10051000.250.50.7511.251.51.75−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)Figure 9. Resistive Switching Time Variationvs. Gate Resistance1000−ID, DRAIN CURRENT (AMPS)VGS = −20 VSINGLE PULSETC = 25°CEAS, SINGLE PULSE DRAIN−TO−SOURCEAVALANCHE ENERGY (mJ)40035030025020015010050025Figure 10. Diode Forward Voltage vs. CurrentID = −15 A100

10dc10 ms1 ms100 msRDS(on) LimitThermal LimitPackage Limit11010 ms1001

0.10.15075100125150−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating AreaFigure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

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NTB5605P

r(t), EFFECTIVE TRANSIENT THERMALRESISTANCE (NORMALIZED)1

D = 0.50.20.10.050.01SINGLE PULSE0.0010.01t, TIME (s)

0.11100.1

0.0001Figure 13. Thermal Response

di/dtIStrrtatbTIME

tpIS0.25 ISFigure 14. Diode Reverse Recovery Waveform

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NTB5605P

PACKAGE DIMENSIONS

D2PAKCASE 418B−04

ISSUE J

CE−B−4VWNOTES:1.DIMENSIONING AND TOLERANCINGPER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.DIMABCDEFGHJKLMNPRSVINCHESMINMAX0.3400.3800.3800.4050.1600.1900.0200.0350.0450.0550.3100.3500.100 BSC0.0800.1100.0180.0250.0900.1100.0520.0720.2800.3200.197 REF0.079 REF0.039 REF0.5750.6250.0450.055GATEDRAINSOURCEDRAIN

MILLIMETERSMINMAX8.9.659.6510.294.0.830.510.1.141.407.878.2. BSC2.032.790.460.2.292.791.321.837.118.135.00 REF2.00 REF0.99 REF14.6015.881.141.40A123S−T−SEATINGPLANEKGD3 PL0.13 (0.005)HMJWTBMVARIABLE

CONFIGURATIONZONELMRNULPLMSTYLE 2:PIN 1.

2.3.4.

MFVIEW W−W

1

FVIEW W−W

2

FVIEW W−W

3

SOLDERING FOOTPRINT*

8.380.3310.660.421.0160.045.080.2017.020.673.050.12mmǓǒinches

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

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NTB5605P

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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