Resist material and process for forming pattern us

专利名称：Resist material and process for forming

pattern using the same

发明人：Urano, Fumiyoshi,Nakahata, Masaaki,Fujie,

Hirotoshi,Oono, Keiji

申请号：EP91307908.3申请日：19910829公开号：EP0476865A1公开日：19920325

摘要：A resist material of chemical amplified type comprising (a) a polymer such as apolymer of 1-methylcycloalkyl 4-ethenylphenoxyacetate and 4-hydroxystyrene, etc., (b)a photo-sensitive compound capable of generating an acid when exposed to light, and (c)a solvent for dissolving both the components (a) and (b) is excellent in heat resistanceand adhesiveness to substrates, capable of maintaining stable pattern dimension fromexposure to light to heat treatment, and capable of forming patterns using deepultraviolet light, KrF excimer laser light, etc.

申请人：WAKO PURE CHEMICAL INDUSTRIES LTD

地址：1-2 Doshomachi-3-chome Chuo-ku Osaka JP

国籍：JP

代理机构：Baillie, Iain Cameron

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