专利名称：Implantation method for simultaneously
implanting in one region and blocking theimplant in another region
发明人：Mark S. Rodder申请号：US09839718申请日：20010420
公开号：US20010046758A1公开日：20011129
摘要：A method of fabricating different transistor structures with the same mask. Amasking layer () has two openings () that expose two transistor areas (). The width of thesecond opening (202) is adjusted such that the angled implant is substantially blockedfrom the second transistor area (). The angled implant forms pocket regions in the firsttransistor area (). The same masking layer () may then be used to implant source anddrain extension regions in both the first and second transistor areas ().
申请人：RODDER MARK S.
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