METHOD OF FORMING CONDUCTORS AT LOW TEMPERATURES U

专利名称：METHOD OF FORMING CONDUCTORS AT

LOW TEMPERATURES USING METALLICNANOCRYSTALS AND PRODUCT

发明人：Vivek Subramanian,Daniel Huang,Steven

Volkman,Frank Jason Liao

申请号：US12403047申请日：20090312

公开号：US20090169730A1公开日：20090702

专利附图：

摘要：Metallic nanoparticles are provided which can be used in forming metallic film

conductors at reduced temperatures compatible with plastic carriers for the film

conductors. This is realized by using a lower molecular weight organic encapsulant of thenanoparticle and thereby reducing the temperature at which the organic encapsulantevaporates. Further, the sintering or melting temperature of the metallic nanoparticle isreduced by using a lower sized nanoparticle, thereby increasing the particle surface arearelative to the particle volume and thus reducing the required heat and meltingtemperature of the particle.

申请人：Vivek Subramanian,Daniel Huang,Steven Volkman,Frank Jason Liao

地址：Orinda CA US,Berkeley CA US,Berkeley CA US,Cupertino CA US

国籍：US,US,US,US

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