Spec. No. : C652J3
Issued Date : 2003.05.16 Revised Date :2005.03.11 Page No. : 1/5
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTC1510J3
Description
The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.
Features:
• High BVCEO • Low VCE(SAT)
• High current gain
• Monolithic construction with built-in base-emitter shunt resistors • TO-252 surface mount package • Pb-free package
Equivalent Circuit Outline
BTC1510J3 C B R1≈8k R2≈120 TO-252 B:Base C:Collector E:Emitter E B CE
BTC1510J3
CYStek Product Specification
元器件交易网www.cecb2b.com
Spec. No. : C652J3
Issued Date : 2003.05.16 Revised Date :2005.03.11 Page No. : 2/5
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw=100ms
Parameter Symbol Limits Unit VCBO 150 V VCEO 150 V VEBO 5 V IC(DC) 10 A
IC(Pulse) 15 *1 Pd(TA=25℃) 1.75
W
Pd(TC=25℃) 20 Tj 150 °C Tstg -55~+150 °C
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 150 - - V IC=100µA, IE=0 BVCEO 150 - - V IC=1mA, IB=0 ICEO - - 200 µA VCE=150V, IE=0 ICBO - - 200 µA VCB=150V, IE=0 IEBO - - 2 mA VEB=5V, IC=0 *VCE(sat) 1 - - 1.5 V IC=5A, IB=10mA *VCE(sat) 2 - - 3 V IC=10A, IB=100mA *VCE(sat) 3 - - 1.5 V IC=5A, IB=2.5mA *VBE(sat) - - 2 V IC=5A, IB=5mA *VBE(on) 1 - - 2.8 V VCE=3V, IC=5A *VBE(on) 2 - - 4.5 V VCE=3V, IC=10A *VFEC - - 3 V IC=5A *hFE1 2 - 20 K VCE=3V, IC=5A *hFE2 100 - - - VCE=3V, IC=10A
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification of VCE(sat) 1
Rank KA N Range <1.1V 1.1~1.5V
BTC1510J3
CYStek Product Specification
元器件交易网www.cecb2b.com
Spec. No. : C652J3
Issued Date : 2003.05.16 Revised Date :2005.03.11 Page No. : 3/5
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current100000HFE@VCE=3VCurrent Gain---HFE10000125℃100075℃10025℃10110100100010000Collector Current---IC(mA)Saturation Voltage---(mV)10000VCE(SAT)@IC=250IBSaturation Voltage vs Collector Current25℃100075℃1001001000125℃10000Collector Current---IC(mA)
Saturation Voltage vs Collcetor Current10000VCE(SAT)@IC=2000IBSaturation Voltage---(mV)75℃25℃1000Saturation Voltage---(mV)10000VCE(SAT)@IC=500IB
Saturation Voltage vs Colltctor Current25℃100075℃125℃1001000Collector Current---IC(mA)125℃100100001001000Collector Current---IC(mA)10000
Saturation Voltage vs Collcetor Current10000
Power Derating Curve2Power Dissipation---PD(W)VBE(ON)@VCE=3VOn Voltage---(mV)25℃75℃1.751.51.2510.750.50.251000125℃1001001000Collector Current---IC(mA)100000050100150200Ambient Temperature---TA(℃)
BTC1510J3
CYStek Product Specification
元器件交易网www.cecb2b.com
Spec. No. : C652J3
Issued Date : 2003.05.16 Revised Date :2005.03.11 Page No. : 4/5
CYStech Electronics Corp.
Power Derating Curve25Power Dissipation---PD(W)20151050050100150200Case Temperature---TC(℃)
BTC1510J3
CYStek Product Specification
元器件交易网www.cecb2b.com
Spec. No. : C652J3
Issued Date : 2003.05.16 Revised Date :2005.03.11 Page No. : 5/5
CYStech Electronics Corp.
TO-252 Dimension ACMarking: BGDC1510 LF3HEK2I1J Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3
*: Typical
DIM
Inches Millimeters Inches Millimeters DIM
Min. Max. Min. Max. Min. Max. Min. Max. A 0.0177 0.0217 0.45 0.55 G 0.08660.1102 2.20 2.80 B 0.0650 0.0768 1.65 1.95 H - *0.0906 - *2.30 C 0.03 0.0591 0.90 1.50 I - 0.03 - 0.90 D 0.0177 0.0236 0.45 0.60 J - 0.0315 - 0.80 E 0.2520 0.2677 6.40 6.80 K 0.20470.2165 5.20 5.50 F 0.2125 0.2283 5.40 5.80 L 0.05510.0630 1.40 1.60 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Notes: 1.Controlling dimension: millimeters. Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC1510J3
CYStek Product Specification
因篇幅问题不能全部显示,请点此查看更多更全内容
Copyright © 2019- oldu.cn 版权所有 浙ICP备2024123271号-1
违法及侵权请联系:TEL:199 1889 7713 E-MAIL:2724546146@qq.com
本站由北京市万商天勤律师事务所王兴未律师提供法律服务