Memory device and memory system having repair unit

专利名称：Memory device and memory system having

repair unit modification function

发明人：Kwang-won Lee,Chang-soo Lee申请号：US15237731申请日：20160816公开号：US09767922B2公开日：20170919

专利附图：

摘要：Provided is a memory device including a memory cell array including a normalarea in which a plurality of memory cells are arranged, and a redundancy area in which aplurality of redundancy memory cells are arranged, and a repair controller configured to

control a repair operation on a defect cell from among the plurality of memory cellsaccording to a first repair unit, and switch a repair unit from the first repair unit to asecond repair unit different from the first repair unit when the repair operation based onthe first repair unit is completed.

申请人：Samsung Electronics Co., Ltd.

地址：Suwon-si KR

国籍：KR

代理机构：Muir Patent Law, PLLC

更多信息请下载全文后查看