AP9990GP-HF 产品资料

Halogen-Free Product

Advanced Power Electronics Corp.▼ Simple Drive Requirement▼ Lower On-resistance▼ Fast Switching Characteristic▼ RoHS Compliant & Halogen-FreeGSN-CHANNEL ENHANCEMENT MODEPOWER MOSFETDBVDSSRDS(ON)ID60V6mΩ100ADescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is widely preferred for commercial-industrialpower applications and suited for low voltage applications such asDC/DC converters.GDTO-220(P)SAbsolute Maximum Ratings

SymbolVDSVGS

ID@TC=25℃ID@Tc=25℃ID@Tc=100℃IDM

PD@Tc=25℃TSTGTJ

Parameter

Drain-Source VoltageGate-Source Voltage

Continuous Drain Current (Chip)Continuous Drain Current, VGS @ 10V3Continuous Drain Current, VGS @ 10VPulsed Drain Current1Total Power DissipationStorage Temperature Range

Operating Junction Temperature Range

Rating60+201008070300125-55 to 175-55 to 175

UnitsVVAAAAW ℃℃

Thermal Data

SymbolRthj-cRthj-a

Parameter

Maximum Thermal Resistance, Junction-caseMaximum Thermal Resistance, Junction-ambient

Value1.262

Units℃/W℃/W

1

200911251

Data and specifications subject to change without notice

AP9990GP-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSSRDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrssRg

Parameter

Drain-Source Breakdown VoltageStatic Drain-Source On-Resistance2Gate Threshold VoltageForward TransconductanceDrain-Source Leakage CurrentGate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceGate Resistance

Test Conditions

VGS=0V, ID=250uAVGS=10V, ID=40AVDS=VGS, ID=250uAVDS=10V, ID=40AVDS=48V, VGS=0VVGS= +20V, VDS=0VID=40AVDS=48VVGS=10VVDS=30VID=40A

RG=1Ω,VGS=10VRD=0.75ΩVGS=0VVDS=25Vf=1.0MHzf=1.0MHz

Min.60-2--------------Typ.---55--591429.5147625124502801.3

Max.Units-65-25+10094---------VmΩVSuAnAnCnCnCnsnsnsnspFpFpFΩ

23203700

Source-Drain Diode

SymbolVSDtrrQrr

Parameter

Forward On Voltage2

Reverse Recovery Time

2

Test Conditions

IS=40A, VGS=0VIS=10A, VGS=0V,dI/dt=100A/µs

Min.---

Typ.-4158

Max.Units1.3--Vns nC

Reverse Recovery Charge

Notes:

1.Pulse width limited by Max. junction temperature.2.Pulse test

3.Package limitation current is 80A.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVERELIABILITY, FUNCTION OR DESIGN.

2

AP9990GP-HF

300160TC=25C250o10V9.0V8.0VID , Drain Current (A)120TC=175oCID , Drain Current (A)10V9.0V8.0V7.0V2007.0VVG=6.0V80150100VG=6.0V405000.04.08.012.016.020.024.000.04.08.012.016.0VDS , Drain-to-Source Voltage (V)VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1.22.4ID=40AVG=10V2.0Normalized BVDSS (V)1.1Normalized RDS(ON)1.611.20.90.80.8-500501001502000.4-50050100150200T j , Junction Temperature (oC)Tj , Junction Temperature (C)o Fig 3. Normalized BVDSS v.s. Junction

Temperature

40 Fig 4. Normalized On-Resistance

1.6 v.s. Junction Temperature

IS(A)oTj=175C20Tj=25oCNormalized VGS(th) (V)1.2301.20.8100.4000.20.40.60.810.0-50050100150200VSD , Source-to-Drain Voltage (V)Tj , Junction Temperature ( C )o Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

3

AP9990GP-HF

12f=1.0MHz4000 ID=40A10VGS , Gate to Source Voltage (V)86C (pF)VDS=30V VDS=36V VDS=48V3000Ciss2000410002CossCrss002040608015913172125290QG , Total Gate Charge (nC)VDS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics10001Duty factor = 0.5Operation in this arealimited by RDS(ON)100Normalized Thermal Response (Rthjc)100us0.2ID (A)0.10.10.051ms10PDM0.02tTDuty Factor = t/TPeak Tj = PDM x Rthjc + TC TC=25oCSingle Pulse10.111010ms100msDC10010000.01Single Pulse0.010.000010.00010.0010.010.1110VDS ,Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS90%VGQG10VQGSQGD10%VGStd(on)trtd(off)tfChargeQ Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4