Memory and method of fabricating the same

专利名称：Memory and method of fabricating the

same

发明人：Yao-Fu Chan,Ta-Kang Chu,Jung-Chuan

Ting,Cheng-Ming Yih

申请号：US12183358申请日：20080731公开号：US07663184B1公开日：20100216

专利附图：

摘要：A memory and a method of fabricating the same are provided. The memory isdisposed on a substrate in which a plurality of trenches is arranged in parallel. The

memory includes a gate structure and a doped region. The gate structure is disposedbetween the trenches. The doped region is disposed at one side of the gate structure, inthe substrate between the trenches and in the sidewalls and bottoms of the trenches.The top surface of the doped region in the substrate between the trenches is lower thanthe surface of the substrate under the gate structure by a distance, and the distance isgreater than 300 Å.

申请人：Yao-Fu Chan,Ta-Kang Chu,Jung-Chuan Ting,Cheng-Ming Yih

地址：Hsinchu TW,Hsinchu TW,Hsinchu TW,Hsinchu TW

国籍：TW,TW,TW,TW

代理机构：J.C. Patents

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